Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs

• المؤلفون الرئيسيون: Liu, Wenhu, Padovani, Andrea, Larcher, Luca, Raghavan, Nagarajan, Pey, Kin Leong
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/104587; http://hdl.handle.net/10220/20244

We investigate correlated gate (IG) and drain (ID) random telegraph noise phenomena observed in post breakdown regime on nMOSFET TiN/HfLaO/ SiOx gate-stacks. We observe two different IG-ID correlation patterns (i.e., of the same and opposite polarities) that we attributed to charge trapping into oxy...