Nanoscale physical analysis of localized breakdown events in HfO2/SiOX dielectric stacks : a correlation study of STM induced BD with C-AFM and TEM

• Main Authors: Shubhakar, K., Pey, Kin Leong, Bosman, Michel, Thamankar, R., Kushvaha, S. S., Loke, Y. C., Wang, Z. R., Raghavan, Nagarajan, Wu, X., O'Shea, S. J.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/98285; http://hdl.handle.net/10220/12309
• Institution: Nanyang Technological University

The study of scanning tunneling microscopy (STM) induced localized degradation and polarity dependent breakdown (BD) of HfO2/SiOx dielectric stacks is presented in this work, together with a correlated investigation of the BD locations by transmission electron microscopy (TEM). The localized dielect...