Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs

Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs

We investigate correlated gate (IG) and drain (ID) random telegraph noise phenomena observed in post breakdown regime on nMOSFET TiN/HfLaO/ SiOx gate-stacks. We observe two different IG-ID correlation patterns (i.e., of the same and opposite polarities) that we attributed to charge trapping into oxy...

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Main Authors: Liu, Wenhu, Padovani, Andrea, Larcher, Luca, Raghavan, Nagarajan, Pey, Kin Leong
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2014
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Online Access:https://hdl.handle.net/10356/104587
http://hdl.handle.net/10220/20244
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1045872020-03-07T13:57:25Z Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs Liu, Wenhu Padovani, Andrea Larcher, Luca Raghavan, Nagarajan Pey, Kin Leong School of Electrical and Electronic Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials We investigate correlated gate (IG) and drain (ID) random telegraph noise phenomena observed in post breakdown regime on nMOSFET TiN/HfLaO/ SiOx gate-stacks. We observe two different IG-ID correlation patterns (i.e., of the same and opposite polarities) that we attributed to charge trapping into oxygen vacancy traps of different kinds located in the SiOx close to the Si/SiOx interface. Results reported in this letter provide useful information for improving the understanding of IG/ID RTN phenomena and its impact on the reliability of post-SBD nanometer MOSFETs. Accepted version 2014-07-24T04:24:50Z 2019-12-06T21:35:45Z 2014-07-24T04:24:50Z 2019-12-06T21:35:45Z 2014 2014 Journal Article Liu, W., Padovani, A., Larcher, L., Raghavan, N., & Pey, K. L. (2014). Analysis of Correlated Gate and Drain Random Telegraph Noise in Post-Soft BreakdownTiN/HfLaO/SiOx nMOSFETs. IEEE Electron Device Letters, 35(2), 157-159. 0741-3106 https://hdl.handle.net/10356/104587 http://hdl.handle.net/10220/20244 10.1109/LED.2013.2295923 en IEEE Electron Device Letters © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/LED.2013.2295923]. 3 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
spellingShingle DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Liu, Wenhu
Padovani, Andrea
Larcher, Luca
Raghavan, Nagarajan
Pey, Kin Leong
Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs
description We investigate correlated gate (IG) and drain (ID) random telegraph noise phenomena observed in post breakdown regime on nMOSFET TiN/HfLaO/ SiOx gate-stacks. We observe two different IG-ID correlation patterns (i.e., of the same and opposite polarities) that we attributed to charge trapping into oxygen vacancy traps of different kinds located in the SiOx close to the Si/SiOx interface. Results reported in this letter provide useful information for improving the understanding of IG/ID RTN phenomena and its impact on the reliability of post-SBD nanometer MOSFETs.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Liu, Wenhu
Padovani, Andrea
Larcher, Luca
Raghavan, Nagarajan
Pey, Kin Leong
format Article
author Liu, Wenhu
Padovani, Andrea
Larcher, Luca
Raghavan, Nagarajan
Pey, Kin Leong
author_sort Liu, Wenhu
title Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs
title_short Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs
title_full Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs
title_fullStr Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs
title_full_unstemmed Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs
title_sort analysis of correlated gate and drain random telegraph noise in post-soft breakdowntin/hflao/siox nmosfets
publishDate 2014
url https://hdl.handle.net/10356/104587
http://hdl.handle.net/10220/20244
_version_ 1681034678495084544

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