Reverse short channel effects in nMOSFETs
Rapid advancement of the Metal-Oxide-Semiconductor (MOS) transistor in the last two decades has seen the approach of the 0.18um technology. However, this has caused phenomena that had not been previously observed. Two of these are the Reverse Short Channel Effects (RSCE) and the Transient Enhanced D...
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sg-ntu-dr.10356-132342023-07-04T15:49:58Z Reverse short channel effects in nMOSFETs Lee, Teck Koon. Liu Po-Ching School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Rapid advancement of the Metal-Oxide-Semiconductor (MOS) transistor in the last two decades has seen the approach of the 0.18um technology. However, this has caused phenomena that had not been previously observed. Two of these are the Reverse Short Channel Effects (RSCE) and the Transient Enhanced Diffusion (TED). The Reverse Short Channel Effects is the anomalous increase in the threshold voltage of devices as channel lengths are reduced and the latter is the enhanced diffusion of the implanted dopants following rapid thermal annealing. Master of Engineering 2008-10-20T07:20:40Z 2008-10-20T07:20:40Z 1999 1999 Thesis http://hdl.handle.net/10356/13234 en 96 p. application/pdf |
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Singapore Singapore |
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DRNTU::Engineering::Electrical and electronic engineering::Semiconductors |
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DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Lee, Teck Koon. Reverse short channel effects in nMOSFETs |
| description |
Rapid advancement of the Metal-Oxide-Semiconductor (MOS) transistor in the last two decades has seen the approach of the 0.18um technology. However, this has caused phenomena that had not been previously observed. Two of these are the Reverse Short Channel Effects (RSCE) and the Transient Enhanced Diffusion (TED). The Reverse Short Channel Effects is the anomalous increase in the threshold voltage of devices as channel lengths are reduced and the latter is the enhanced diffusion of the implanted dopants following rapid thermal annealing. |
| author2 |
Liu Po-Ching |
| author_facet |
Liu Po-Ching Lee, Teck Koon. |
| format |
Theses and Dissertations |
| author |
Lee, Teck Koon. |
| author_sort |
Lee, Teck Koon. |
| title |
Reverse short channel effects in nMOSFETs |
| title_short |
Reverse short channel effects in nMOSFETs |
| title_full |
Reverse short channel effects in nMOSFETs |
| title_fullStr |
Reverse short channel effects in nMOSFETs |
| title_full_unstemmed |
Reverse short channel effects in nMOSFETs |
| title_sort |
reverse short channel effects in nmosfets |
| publishDate |
2008 |
| url |
http://hdl.handle.net/10356/13234 |
| _version_ |
1772827303048380416 |