Degradation of high-frequency noise in nMOSFETs under different modes of hot-carrier stress
In this paper, high-frequency noise under different hot-carrier (HC) stress modes in nMOSFETs has been characterized and analyzed. The experimental results revealed a significant larger increase in NFmin and Rn under maximum substrate current IB, max stress or hot hole injection Hinj than hot electr...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/98943 http://hdl.handle.net/10220/13449 |
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| Institution: | Nanyang Technological University |
| Language: | English |