Degradation of high-frequency noise in nMOSFETs under different modes of hot-carrier stress

• Main Authors: Liao, Hong, Hu, Hang, Su, Hao, Wang, Hong
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/98943; http://hdl.handle.net/10220/13449
• Institution: Nanyang Technological University

In this paper, high-frequency noise under different hot-carrier (HC) stress modes in nMOSFETs has been characterized and analyzed. The experimental results revealed a significant larger increase in NFmin and Rn under maximum substrate current IB, max stress or hot hole injection Hinj than hot electr...