Text this: New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs

 _    _     ______    _____      ___      _  __  
| \  / ||  /_   _//  |__  //    / _ \\   | |/ // 
|  \/  ||   -| ||-     / //    / //\ \\  | ' //  
| .  . ||   _| ||_    / //__  |  ___  || | . \\  
|_|\/|_||  /_____//  /_____|| |_||  |_|| |_|\_\\ 
`-`  `-`   `-----`   `-----`  `-`   `-`  `-` --`