New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs
Annual Proceedings - Reliability Physics (Symposium)
Saved in:
Main Authors: | Leang, S.E., Chan, D.S.H., Chim, W.K. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/72793 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs
by: Leang, S.E., et al.
Published: (2014) -
Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements
by: Chan, D.S.H., et al.
Published: (2014) -
Investigation of the role of hot holes and hot electrons in the generation of interface states in submicrometre MOSFETs using a new charge-profiling technique based on charge-pumping measurements
by: Chan, D.S.H., et al.
Published: (2014) -
A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs
by: Leang, S.E., et al.
Published: (2014) -
Characterization of hot-carrier degradation in non-isolated MOSFETs using a new gate-current measurement technique
by: Leang, S.E., et al.
Published: (2014)