New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs

Annual Proceedings - Reliability Physics (Symposium)

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Main Authors:	Leang, S.E., Chan, D.S.H., Chim, W.K.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/72793
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-727932015-02-18T19:01:23Z New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs Leang, S.E. Chan, D.S.H. Chim, W.K. ELECTRICAL ENGINEERING Annual Proceedings - Reliability Physics (Symposium) 311-317 ARLPB 2014-06-19T05:12:03Z 2014-06-19T05:12:03Z 1996 Conference Paper Leang, S.E.,Chan, D.S.H.,Chim, W.K. (1996). New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs. Annual Proceedings - Reliability Physics (Symposium) : 311-317. ScholarBank@NUS Repository. 00999512 http://scholarbank.nus.edu.sg/handle/10635/72793 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Annual Proceedings - Reliability Physics (Symposium)
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Leang, S.E. Chan, D.S.H. Chim, W.K.
format	Conference or Workshop Item
author	Leang, S.E. Chan, D.S.H. Chim, W.K.
spellingShingle	Leang, S.E. Chan, D.S.H. Chim, W.K. New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs
author_sort	Leang, S.E.
title	New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs
title_short	New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs
title_full	New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs
title_fullStr	New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs
title_full_unstemmed	New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs
title_sort	new purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in mosfets
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/72793
_version_	1681087630397145088

New purely-experimental technique for extracting the spatial distribution of hot-carrier-induced interface states and trapped charges in MOSFETs

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