Stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Saved in:
Main Authors: | Lim, P.S., Chim, W.K. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/62817 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Neutral electron trap generation and hole trapping in thin oxides under electrostatic discharge stress
by: Chim, W.K., et al.
Published: (2014) -
Neutral electron trap generation and hole trapping in thin oxides under electrostatic discharge stress
by: Chim, W.K., et al.
Published: (2014) -
Latent damage generation in thin oxides of metal-oxide-semiconductor devices under high-field impulse stress and damage characterization using low-frequency noise measurement
by: Chim, W.K., et al.
Published: (2014) -
Threshold voltage instabilities in MOS transistors with advanced gate dielectrics
by: SHEN CHEN
Published: (2010) -
Gate-induced drain leakage current enhanced by plasma charging damage
by: Ma, S., et al.
Published: (2014)