Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs

Under a given stress field, the recoverable component (R) for HfO2 p-MOSFET appears almost constant at lower temperatures but shows a progressive decrease at higher temperatures. Similar conclusion can also be obtained for HfSiON p-MOSFET. Evidence shows that the decrease in R is due to its transfor...

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Main Authors: Gao, Yuan, Ang, Diing Shenp, Young, C. D., Bersuker, G.
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/102009
http://hdl.handle.net/10220/16410
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1020092020-03-07T13:24:51Z Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs Gao, Yuan Ang, Diing Shenp Young, C. D. Bersuker, G. School of Electrical and Electronic Engineering IEEE International Reliability Physics Symposium (2012 : Anaheim, California, US) DRNTU::Engineering::Electrical and electronic engineering Under a given stress field, the recoverable component (R) for HfO2 p-MOSFET appears almost constant at lower temperatures but shows a progressive decrease at higher temperatures. Similar conclusion can also be obtained for HfSiON p-MOSFET. Evidence shows that the decrease in R is due to its transformation into a more permanent form (P). We show that those switching hole traps (SHTs) responsible for the R share the same origin as a portion of bulk traps responsible for the stress induced leakage current (SILC) and 1/f noise of the high-k gate p-MOSFET. When the density of SHTs is constant, no increase in 1/f noise and SILC, i.e. no apparent generation of bulk traps, is observed after NBTI stress. An increase in the SILC and 1/f noise, which implies the generation of bulk traps, is observed when part of these SHTs are transformed into relatively permanent bulk traps, allowing them to be sensed by the slow SILC and 1/f noise measurements. 2013-10-10T07:02:41Z 2019-12-06T20:48:17Z 2013-10-10T07:02:41Z 2019-12-06T20:48:17Z 2012 2012 Conference Paper Gao, Y., Ang, D. S., Young, C. D., & Bersuker, G. (2012). Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs. 2012 IEEE International Reliability Physics Symposium (IRPS), pp.5A.5.1-5A.5.5. https://hdl.handle.net/10356/102009 http://hdl.handle.net/10220/16410 10.1109/IRPS.2012.6241842 en
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Gao, Yuan
Ang, Diing Shenp
Young, C. D.
Bersuker, G.
Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs
description Under a given stress field, the recoverable component (R) for HfO2 p-MOSFET appears almost constant at lower temperatures but shows a progressive decrease at higher temperatures. Similar conclusion can also be obtained for HfSiON p-MOSFET. Evidence shows that the decrease in R is due to its transformation into a more permanent form (P). We show that those switching hole traps (SHTs) responsible for the R share the same origin as a portion of bulk traps responsible for the stress induced leakage current (SILC) and 1/f noise of the high-k gate p-MOSFET. When the density of SHTs is constant, no increase in 1/f noise and SILC, i.e. no apparent generation of bulk traps, is observed after NBTI stress. An increase in the SILC and 1/f noise, which implies the generation of bulk traps, is observed when part of these SHTs are transformed into relatively permanent bulk traps, allowing them to be sensed by the slow SILC and 1/f noise measurements.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Gao, Yuan
Ang, Diing Shenp
Young, C. D.
Bersuker, G.
format Conference or Workshop Item
author Gao, Yuan
Ang, Diing Shenp
Young, C. D.
Bersuker, G.
author_sort Gao, Yuan
title Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs
title_short Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs
title_full Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs
title_fullStr Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs
title_full_unstemmed Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs
title_sort evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k p-mosfets
publishDate 2013
url https://hdl.handle.net/10356/102009
http://hdl.handle.net/10220/16410
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