Electron trap transformation under positive-bias temperature stressing

• Main Authors: Gao, Yuan, Ang, Diing Shenp, Bersuker, G., Young, C. D.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/96942; http://hdl.handle.net/10220/9977
• Institution: Nanyang Technological University

Electron detrapping in the TiN/HfO2 gate n-MOSFET under dynamic positive-bias temperature instability (PBTI) is examined. Similar to hole detrapping under dynamic negative-bias temperature instability (NBTI), electron detrapping per relaxation cycle is a constant under a low oxide stress field (~ 5....