Electron trap transformation under positive-bias temperature stressing
Electron detrapping in the TiN/HfO2 gate n-MOSFET under dynamic positive-bias temperature instability (PBTI) is examined. Similar to hole detrapping under dynamic negative-bias temperature instability (NBTI), electron detrapping per relaxation cycle is a constant under a low oxide stress field (~ 5....
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Main Authors: | , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/96942 http://hdl.handle.net/10220/9977 |
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Institution: | Nanyang Technological University |
Language: | English |
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