Bimodal weibull distribution of metal/high-κ gate stack TDDB-insights by scanning tunneling microscopy

• Main Authors: Yew, K. S., Bersuker, G., Ang, Diing Shenp
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/85052; http://hdl.handle.net/10220/11337

We provide new insights, via nanoscale TDDB testing, into the bimodal Weibull failure distribution obtained from area scaling of high-κ (HK) gate stack. Time-to-breakdown (BD) statistics for grain boundary (GB) and grain in a polycrystalline HK gate stack are obtained individually from localized con...