Bimodal weibull distribution of metal/high-κ gate stack TDDB-insights by scanning tunneling microscopy

We provide new insights, via nanoscale TDDB testing, into the bimodal Weibull failure distribution obtained from area scaling of high-κ (HK) gate stack. Time-to-breakdown (BD) statistics for grain boundary (GB) and grain in a polycrystalline HK gate stack are obtained individually from localized con...

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Main Authors: Yew, K. S., Bersuker, G., Ang, Diing Shenp
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/85052
http://hdl.handle.net/10220/11337
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-850522020-03-07T13:57:24Z Bimodal weibull distribution of metal/high-κ gate stack TDDB-insights by scanning tunneling microscopy Yew, K. S. Bersuker, G. Ang, Diing Shenp School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering We provide new insights, via nanoscale TDDB testing, into the bimodal Weibull failure distribution obtained from area scaling of high-κ (HK) gate stack. Time-to-breakdown (BD) statistics for grain boundary (GB) and grain in a polycrystalline HK gate stack are obtained individually from localized constant voltage stressing via a scanning tunneling microscope. In spite of an initial difference in the preexisting defect density, no apparent difference in the Weibull slope is observed for the two sets of BD statistics. The bimodal Weibull distribution is shown to be a combined effect: 1) The steep Weibull slope of the lower percentile, arising from large-area devices, is related to BD at GBs, and 2) the upper percentile, arising from small-area devices, is mostly related to grain BDs. In this case, the Weibull slope is reduced by a small fraction of these devices exhibiting early failures due to GB BDs. We show directly that structural defects in an HK dielectric, particularly GBs, play an important role on its BD distribution. 2013-07-12T07:46:45Z 2019-12-06T15:56:15Z 2013-07-12T07:46:45Z 2019-12-06T15:56:15Z 2011 2011 Journal Article https://hdl.handle.net/10356/85052 http://hdl.handle.net/10220/11337 10.1109/LED.2011.2174606 en IEEE electron device letters © 2011 IEEE.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Yew, K. S.
Bersuker, G.
Ang, Diing Shenp
Bimodal weibull distribution of metal/high-κ gate stack TDDB-insights by scanning tunneling microscopy
description We provide new insights, via nanoscale TDDB testing, into the bimodal Weibull failure distribution obtained from area scaling of high-κ (HK) gate stack. Time-to-breakdown (BD) statistics for grain boundary (GB) and grain in a polycrystalline HK gate stack are obtained individually from localized constant voltage stressing via a scanning tunneling microscope. In spite of an initial difference in the preexisting defect density, no apparent difference in the Weibull slope is observed for the two sets of BD statistics. The bimodal Weibull distribution is shown to be a combined effect: 1) The steep Weibull slope of the lower percentile, arising from large-area devices, is related to BD at GBs, and 2) the upper percentile, arising from small-area devices, is mostly related to grain BDs. In this case, the Weibull slope is reduced by a small fraction of these devices exhibiting early failures due to GB BDs. We show directly that structural defects in an HK dielectric, particularly GBs, play an important role on its BD distribution.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Yew, K. S.
Bersuker, G.
Ang, Diing Shenp
format Article
author Yew, K. S.
Bersuker, G.
Ang, Diing Shenp
author_sort Yew, K. S.
title Bimodal weibull distribution of metal/high-κ gate stack TDDB-insights by scanning tunneling microscopy
title_short Bimodal weibull distribution of metal/high-κ gate stack TDDB-insights by scanning tunneling microscopy
title_full Bimodal weibull distribution of metal/high-κ gate stack TDDB-insights by scanning tunneling microscopy
title_fullStr Bimodal weibull distribution of metal/high-κ gate stack TDDB-insights by scanning tunneling microscopy
title_full_unstemmed Bimodal weibull distribution of metal/high-κ gate stack TDDB-insights by scanning tunneling microscopy
title_sort bimodal weibull distribution of metal/high-κ gate stack tddb-insights by scanning tunneling microscopy
publishDate 2013
url https://hdl.handle.net/10356/85052
http://hdl.handle.net/10220/11337
_version_ 1681035451614363648