Bimodal weibull distribution of metal/high-κ gate stack TDDB-insights by scanning tunneling microscopy

• Main Authors: Yew, K. S., Bersuker, G., Ang, Diing Shenp
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/85052; http://hdl.handle.net/10220/11337
• Institution: Nanyang Technological University

We provide new insights, via nanoscale TDDB testing, into the bimodal Weibull failure distribution obtained from area scaling of high-κ (HK) gate stack. Time-to-breakdown (BD) statistics for grain boundary (GB) and grain in a polycrystalline HK gate stack are obtained individually from localized con...