Nanoscale characterization of advanced high-κ gate dielectric stacks via scanning tunneling microscopy

• Main Author: Yew, Kwang Sing
• Other Authors: Ang Diing Shenp
• Format: Theses and Dissertations
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: https://hdl.handle.net/10356/61038
• Institution: Nanyang Technological University

Gate leakage is the major driving force for the integration of high-κ dielectric in the silicon-based CMOS technology at sub-45 nm nodes. By virtue of the higher dielectric constant value, high-κ metal oxide provides a physically thicker insulator in suppressing the gate leakage while achieving the...