Atomistic simulation study of high-κ oxide defects for understanding gate stack and RRAM reliability

High-κ Oxide Defects in the MOSFET gate stack and RRAM cell severely impact the device reliability. In this work, we conducted first-principles modeling and simulation to investigate BTI performance in the SiON, HfO2 and La doped HfO2 MOSFET gate stacks. The properties of VO, Oi and VO-Oi defect pai...

Full description

Saved in:
Bibliographic Details
Main Author: Gu, Chenjie
Other Authors: Ang Diing Shenp
Format: Theses and Dissertations
Language:English
Published: 2015
Subjects:
Online Access:https://hdl.handle.net/10356/62224
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English