Atomistic simulation study of high-κ oxide defects for understanding gate stack and RRAM reliability
High-κ Oxide Defects in the MOSFET gate stack and RRAM cell severely impact the device reliability. In this work, we conducted first-principles modeling and simulation to investigate BTI performance in the SiON, HfO2 and La doped HfO2 MOSFET gate stacks. The properties of VO, Oi and VO-Oi defect pai...
محفوظ في:
المؤلف الرئيسي: | Gu, Chenjie |
---|---|
مؤلفون آخرون: | Ang Diing Shenp |
التنسيق: | Theses and Dissertations |
اللغة: | English |
منشور في: |
2015
|
الموضوعات: | |
الوصول للمادة أونلاين: | https://hdl.handle.net/10356/62224 |
الوسوم: |
إضافة وسم
لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
|
مواد مشابهة
-
Nanoscale characterization of advanced high-κ gate dielectric stacks via scanning tunneling microscopy
بواسطة: Yew, Kwang Sing
منشور في: (2014) -
Simulation of resistive random-access memory (RRAM) : SPICE modelling of RRAM device
بواسطة: Lian, Jie
منشور في: (2021) -
High-κ/metal gate for advanced transistor applications
بواسطة: Duan, Tianli
منشور في: (2015) -
Role of grain boundary percolative defects and localized trap generation on the reliability statistics of high-κ gate dielectric stacks
بواسطة: Raghavan, Nagarajan, وآخرون
منشور في: (2013) -
Analysis of high-dielectric constant gate stack reliability for nanoscale CMOS devices application via scanning tunneling microscopy
بواسطة: Ong, Yi Ching
منشور في: (2009)