Atomistic simulation study of high-κ oxide defects for understanding gate stack and RRAM reliability
High-κ Oxide Defects in the MOSFET gate stack and RRAM cell severely impact the device reliability. In this work, we conducted first-principles modeling and simulation to investigate BTI performance in the SiON, HfO2 and La doped HfO2 MOSFET gate stacks. The properties of VO, Oi and VO-Oi defect pai...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2015
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| Online Access: | https://hdl.handle.net/10356/62224 |
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| Institution: | Nanyang Technological University |
| Language: | English |