Double-gated CNTFETs with Al2O3/Si3N4 as gate dielectrics

• Main Author: Fan, Yu
• Other Authors: Zhang Qing
• Format: Final Year Project
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/17999
• Institution: Nanyang Technological University

This report focuses on fabrication and investigation of double-gated Carbon Nanotube Field-Effect-Transistors (CNTFETs) in which both partial top gate and global back gate are fabricated on the same device. Two design structures were fabricated to compare improvements of high K dielectric material o...