Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage

• Main Authors: Gao, Bin, Yu, Hongyu, Kang, J. F., Chen, B., Liu, L. F., Liu, X. Y., Wang, Z. R., Yu, B.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/97328; http://hdl.handle.net/10220/11838
• Institution: Nanyang Technological University

A novel strategy based on defect engineering is proposed for high-performance multilevel data storage in oxide-based resistive random access memory (RRAM). Key innovations are (i) material-oriented cell engineering for desired modification of physical locations of generated oxygen vacancies in resis...