Oxide-based RRAM : a novel defect-engineering-based implementation for multilevel data storage
A novel strategy based on defect engineering is proposed for high-performance multilevel data storage in oxide-based resistive random access memory (RRAM). Key innovations are (i) material-oriented cell engineering for desired modification of physical locations of generated oxygen vacancies in resis...
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Main Authors: | Gao, Bin, Yu, Hongyu, Kang, J. F., Chen, B., Liu, L. F., Liu, X. Y., Wang, Z. R., Yu, B. |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Conference or Workshop Item |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/97328 http://hdl.handle.net/10220/11838 |
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Institution: | Nanyang Technological University |
Language: | English |
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