Advanced oxide based resistive random access memories (RRAMs) : switching mechanisms and material solutions
This thesis reports a study of the resistive switching phenomena in oxide based material systems, practically hafnium and graphene oxide based Resistive Random Access Memories (RRAMs), in aspects of device fabrication, electrical and physical characterization, and theoretical calculation. Both hafni...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2014
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| Online Access: | https://hdl.handle.net/10356/61763 |
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| Institution: | Nanyang Technological University |
| Language: | English |