Advanced oxide based resistive random access memories (RRAMs) : switching mechanisms and material solutions

This thesis reports a study of the resistive switching phenomena in oxide based material systems, practically hafnium and graphene oxide based Resistive Random Access Memories (RRAMs), in aspects of device fabrication, electrical and physical characterization, and theoretical calculation. Both hafni...

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Bibliographic Details
Main Author: Wang, Zhongrui
Other Authors: Hong-yu Yu
Format: Theses and Dissertations
Language:English
Published: 2014
Subjects:
Online Access:https://hdl.handle.net/10356/61763
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Institution: Nanyang Technological University
Language: English

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