Low dielectric constant materials for multilevel interconnect applications

Low dielectric constant (low-k) constitutive dielectrics for interconnects have been fabricated by both plasma deposition and solution synthesis from -organosilicon precursors. Fluorinated silicon oxide (FSG) was deposited from an inductively coupled high density plasma. The mechanisms of dielectric...

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主要作者: Wong, Terence Kin Shun.
其他作者: Wong Kin Shun, Terence
格式: Research Report
出版: 2008
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在線閱讀:http://hdl.handle.net/10356/2897
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機構: Nanyang Technological University