Low dielectric constant materials for multilevel interconnect applications

Low dielectric constant (low-k) constitutive dielectrics for interconnects have been fabricated by both plasma deposition and solution synthesis from -organosilicon precursors. Fluorinated silicon oxide (FSG) was deposited from an inductively coupled high density plasma. The mechanisms of dielectric...

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Bibliographic Details
Main Author: Wong, Terence Kin Shun.
Other Authors: Wong Kin Shun, Terence
Format: Research Report
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/2897
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Institution: Nanyang Technological University
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