Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications

With the miniaturization of semiconductor devices, new dielectric materials with dielectric constant (k) lower than silicon dioxide (k = 4.0) are required to reduce propagation delay, cross talk noise and power dissipation of the interconnect system in ultra-large-scale integrated circuits (ULSI). T...

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Bibliographic Details
Main Author: Yu, Suzhu
Other Authors: Hu Xiao
Format: Theses and Dissertations
Published: 2008
Subjects:
Online Access:https://hdl.handle.net/10356/3931
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Institution: Nanyang Technological University