Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications

With the miniaturization of semiconductor devices, new dielectric materials with dielectric constant (k) lower than silicon dioxide (k = 4.0) are required to reduce propagation delay, cross talk noise and power dissipation of the interconnect system in ultra-large-scale integrated circuits (ULSI). T...

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書目詳細資料
主要作者: Yu, Suzhu
其他作者: Hu Xiao
格式: Theses and Dissertations
出版: 2008
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在線閱讀:https://hdl.handle.net/10356/3931
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