Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications

With the miniaturization of semiconductor devices, new dielectric materials with dielectric constant (k) lower than silicon dioxide (k = 4.0) are required to reduce propagation delay, cross talk noise and power dissipation of the interconnect system in ultra-large-scale integrated circuits (ULSI). T...

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Main Author:	Yu, Suzhu
Other Authors:	Hu Xiao
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:	https://hdl.handle.net/10356/3931
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Institution:	Nanyang Technological University

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spelling	sg-ntu-dr.10356-39312023-07-04T17:36:55Z Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications Yu, Suzhu Hu Xiao Wong Kin Shun, Terence School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials With the miniaturization of semiconductor devices, new dielectric materials with dielectric constant (k) lower than silicon dioxide (k = 4.0) are required to reduce propagation delay, cross talk noise and power dissipation of the interconnect system in ultra-large-scale integrated circuits (ULSI). This thesis presents the results of fabrication and characterization of mesoporous organosilicate films used as interconnect dielectrics. Two basic methods to establish porous network in the films, namely the sol-gel and sacrificial template approaches, have been used in this work. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:40:37Z 2008-09-17T09:40:37Z 2005 2005 Thesis Yu, S. Z. (2005). Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/3931 10.32657/10356/3931 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials Yu, Suzhu Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications
description	With the miniaturization of semiconductor devices, new dielectric materials with dielectric constant (k) lower than silicon dioxide (k = 4.0) are required to reduce propagation delay, cross talk noise and power dissipation of the interconnect system in ultra-large-scale integrated circuits (ULSI). This thesis presents the results of fabrication and characterization of mesoporous organosilicate films used as interconnect dielectrics. Two basic methods to establish porous network in the films, namely the sol-gel and sacrificial template approaches, have been used in this work.
author2	Hu Xiao
author_facet	Hu Xiao Yu, Suzhu
format	Theses and Dissertations
author	Yu, Suzhu
author_sort	Yu, Suzhu
title	Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications
title_short	Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications
title_full	Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications
title_fullStr	Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications
title_full_unstemmed	Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications
title_sort	fabrication and characterization of mesoporous dielectric materials for ulsi interconnect applications
publishDate	2008
url	https://hdl.handle.net/10356/3931
_version_	1772826749764108288

Fabrication and characterization of mesoporous dielectric materials for ULSI interconnect applications

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