Advanced oxide based resistive random access memories (RRAMs) : switching mechanisms and material solutions

• Main Author: Wang, Zhongrui
• Other Authors: Hong-yu Yu
• Format: Theses and Dissertations
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• Online Access: https://hdl.handle.net/10356/61763
• Institution: Nanyang Technological University

This thesis reports a study of the resistive switching phenomena in oxide based material systems, practically hafnium and graphene oxide based Resistive Random Access Memories (RRAMs), in aspects of device fabrication, electrical and physical characterization, and theoretical calculation. Both hafni...