Resistive switching phenomena for resistive random access memory applications

The organic based resistive switching device, one of the candidates vying to be the next generation’s source of non-volatile memory (NVM) storage has generated substantial interest in recent years due to its potential to providing low cost, flexible and lightweight data storage applications, easi...

Full description

Saved in:
Bibliographic Details
Main Author: Sim, Raymond Keng Lim.
Other Authors: Lee Pooi See
Format: Theses and Dissertations
Language:English
Published: 2013
Subjects:
Online Access:http://hdl.handle.net/10356/51138
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English