Resistive switching phenomena for resistive random access memory applications
The organic based resistive switching device, one of the candidates vying to be the next generation’s source of non-volatile memory (NVM) storage has generated substantial interest in recent years due to its potential to providing low cost, flexible and lightweight data storage applications, easi...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2013
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| Online Access: | http://hdl.handle.net/10356/51138 |
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| Institution: | Nanyang Technological University |
| Language: | English |