Resistive switching memories in MoS2 nanosphere assemblies

• Main Authors: Xu, Xiao-Yong, Yin, Zong-You, Xu, Chun-Xiang, Dai, Jun, Hu, Jing-Guo
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/80057; http://hdl.handle.net/10220/18993
• Institution: Nanyang Technological University

A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS2 nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RE...