Resistive switching memories in MoS2 nanosphere assemblies

A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS2 nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RE...

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Main Authors:	Xu, Xiao-Yong, Yin, Zong-You, Xu, Chun-Xiang, Dai, Jun, Hu, Jing-Guo
Other Authors:	School of Materials Science & Engineering
Format:	Article
Language:	English
Published:	2014
Subjects:	DRNTU::Engineering::Materials
Online Access:	https://hdl.handle.net/10356/80057 http://hdl.handle.net/10220/18993
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-80057
record_format	dspace
spelling	sg-ntu-dr.10356-800572023-07-14T15:49:18Z Resistive switching memories in MoS2 nanosphere assemblies Xu, Xiao-Yong Yin, Zong-You Xu, Chun-Xiang Dai, Jun Hu, Jing-Guo School of Materials Science & Engineering DRNTU::Engineering::Materials A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS2 nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (∼2 V), high ON/OFF resistance ratio (∼104), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was analyzed in the assumptive model of the electron tunneling across the polarized potential barriers. Published version 2014-03-27T06:50:01Z 2019-12-06T13:39:39Z 2014-03-27T06:50:01Z 2019-12-06T13:39:39Z 2014 2014 Journal Article Xu, X.-Y., Yin, Z.-Y., Xu, C.-X., Dai, J., & Hu, J. G. (2014). Resistive switching memories in MoS2 nanosphere assemblies. Applied Physics Letters, 104(3), 033504-. https://hdl.handle.net/10356/80057 http://hdl.handle.net/10220/18993 10.1063/1.4862755 en Applied physics letters © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4862755]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Materials
spellingShingle	DRNTU::Engineering::Materials Xu, Xiao-Yong Yin, Zong-You Xu, Chun-Xiang Dai, Jun Hu, Jing-Guo Resistive switching memories in MoS2 nanosphere assemblies
description	A resistive switching memory device consisting of reduced graphene oxide and indium tin oxide as top/bottom two electrodes, separated by dielectric MoS2 nanosphere assemblies as the active interlayer, was fabricated. This device exhibits the rewritable nonvolatile resistive switching with low SET/RESET voltage (∼2 V), high ON/OFF resistance ratio (∼104), and superior electrical bistability, introducing a potential application in data storage field. The resistance switching mechanism was analyzed in the assumptive model of the electron tunneling across the polarized potential barriers.
author2	School of Materials Science & Engineering
author_facet	School of Materials Science & Engineering Xu, Xiao-Yong Yin, Zong-You Xu, Chun-Xiang Dai, Jun Hu, Jing-Guo
format	Article
author	Xu, Xiao-Yong Yin, Zong-You Xu, Chun-Xiang Dai, Jun Hu, Jing-Guo
author_sort	Xu, Xiao-Yong
title	Resistive switching memories in MoS2 nanosphere assemblies
title_short	Resistive switching memories in MoS2 nanosphere assemblies
title_full	Resistive switching memories in MoS2 nanosphere assemblies
title_fullStr	Resistive switching memories in MoS2 nanosphere assemblies
title_full_unstemmed	Resistive switching memories in MoS2 nanosphere assemblies
title_sort	resistive switching memories in mos2 nanosphere assemblies
publishDate	2014
url	https://hdl.handle.net/10356/80057 http://hdl.handle.net/10220/18993
_version_	1772826662782631936

Resistive switching memories in MoS2 nanosphere assemblies

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