Sericin for resistance switching device with multilevel nonvolatile memory

• Main Authors: Wang, Hong, Meng, Fanben, Cai, Yurong, Zheng, Liyan, Li, Yuangang, Liu, Yuanjun, Jiang, Yueyue, Wang, Xiaotian, Chen, Xiaodong
• 其他作者: School of Materials Science & Engineering
• 格式: Article
• 語言: English
• 出版: 2014
• 主題: DRNTU::Engineering::Materials
• 在線閱讀: https://hdl.handle.net/10356/102562; http://hdl.handle.net/10220/19101
• 機構: Nanyang Technological University

Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 106 have been obtained and a multilevel memory based on sericin has been achieved. T...