Nonvolatile resistive switching memory based on amorphous carbon

10.1063/1.3406121

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Bibliographic Details
Main Authors: Zhuge, F., Dai, W., He, C.L., Wang, A.Y., Liu, Y.W., Li, M., Wu, Y.H., Cui, P., Li, R.-W.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82780
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Institution: National University of Singapore