Sericin for resistance switching device with multilevel nonvolatile memory

• Main Authors: Wang, Hong, Meng, Fanben, Cai, Yurong, Zheng, Liyan, Li, Yuangang, Liu, Yuanjun, Jiang, Yueyue, Wang, Xiaotian, Chen, Xiaodong
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/102562; http://hdl.handle.net/10220/19101
• Institution: Nanyang Technological University

Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 106 have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development.