Dielectric breakdown - recovery in logic and resistive switching in memory : bridging the gap between the two phenomena

• Main Authors: Pey, Kin Leong, Raghavan, Nagarajan, Wu, Xing, Liu, Wenhu, Bosman, Michel
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/101321; http://hdl.handle.net/10220/16275
• Institution: Nanyang Technological University

Dielectric breakdown is a well documented phenomenon studied for logic transistors using SiO2/SiON and HfO2 as the oxide material with thickness ranging from 1-5 nm. Recovery of dielectric breakdown has also been reported recently and its implications on the prolonged time dependent dielectric break...