Resistive switching memory : next generation non-volatile memory technology

• Main Author: Poh, Jake Wei Li
• Other Authors: Ang Diing Shenp
• Format: Final Year Project
• Language: English
• Published: 2019
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics; DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• Online Access: http://hdl.handle.net/10356/77595
• Institution: Nanyang Technological University

The resistive random access memory is one of the candidates identified for replacing the current flash memory technology, based on which pen drive, thumb drive and Solid State Drive (SSD) memories operate. Compared to the current planar flash memory technology, resistive memory has a much simpler me...