Resistive switching memory : next generation non-volatile memory technology

Resistive switching memory : next generation non-volatile memory technology

The resistive random access memory is one of the candidates identified for replacing the current flash memory technology, based on which pen drive, thumb drive and Solid State Drive (SSD) memories operate. Compared to the current planar flash memory technology, resistive memory has a much simpler me...

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Bibliographic Details
Main Author: Poh, Jake Wei Li
Other Authors: Ang Diing Shenp
Format: Final Year Project
Language:English
Published: 2019
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Online Access:http://hdl.handle.net/10356/77595
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Institution: Nanyang Technological University
Language: English
Description
Summary:The resistive random access memory is one of the candidates identified for replacing the current flash memory technology, based on which pen drive, thumb drive and Solid State Drive (SSD) memories operate. Compared to the current planar flash memory technology, resistive memory has a much simpler metal/insulator/metal structure, nanosecond switching speed and can be integrated in a crossbar architecture to yield a three-dimensional memory suitable for terabyte and above density.

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