Resistive switching memory : next generation non-volatile memory technology
The resistive random access memory is one of the candidates identified for replacing the current flash memory technology, based on which pen drive, thumb drive and Solid State Drive (SSD) memories operate. Compared to the current planar flash memory technology, resistive memory has a much simpler me...
Saved in:
Main Author: | Poh, Jake Wei Li |
---|---|
Other Authors: | Ang Diing Shenp |
Format: | Final Year Project |
Language: | English |
Published: |
2019
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/77595 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Functionalization of transparent oxide resistive random-access memories for visible light photosensitivity
by: Kalaga, Pranav Sairam
Published: (2022) -
All-optical processing technologies for next generation optical networks
by: Wang, Dawei
Published: (2012) -
Resistive switching devices based on halide perovskites
by: Cheong, Cheng Hao
Published: (2020) -
A study on complementary resistive switching charateristics in resistive random access memory for next-generation non-volatile memory technology
by: Zhang, Haizhong
Published: (2017) -
Next generation optical access network
by: Cheng, Tee Hiang, et al.
Published: (2008)