Resistive switching memory : next generation non-volatile memory technology

The resistive random access memory is one of the candidates identified for replacing the current flash memory technology, based on which pen drive, thumb drive and Solid State Drive (SSD) memories operate. Compared to the current planar flash memory technology, resistive memory has a much simpler me...

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Main Author:	Poh, Jake Wei Li
Other Authors:	Ang Diing Shenp
Format:	Final Year Project
Language:	English
Published:	2019
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Online Access:	http://hdl.handle.net/10356/77595
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-775952023-07-07T17:15:01Z Resistive switching memory : next generation non-volatile memory technology Poh, Jake Wei Li Ang Diing Shenp School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics The resistive random access memory is one of the candidates identified for replacing the current flash memory technology, based on which pen drive, thumb drive and Solid State Drive (SSD) memories operate. Compared to the current planar flash memory technology, resistive memory has a much simpler metal/insulator/metal structure, nanosecond switching speed and can be integrated in a crossbar architecture to yield a three-dimensional memory suitable for terabyte and above density. Bachelor of Engineering (Electrical and Electronic Engineering) 2019-06-03T04:25:21Z 2019-06-03T04:25:21Z 2019 Final Year Project (FYP) http://hdl.handle.net/10356/77595 en Nanyang Technological University 121 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Poh, Jake Wei Li Resistive switching memory : next generation non-volatile memory technology
description	The resistive random access memory is one of the candidates identified for replacing the current flash memory technology, based on which pen drive, thumb drive and Solid State Drive (SSD) memories operate. Compared to the current planar flash memory technology, resistive memory has a much simpler metal/insulator/metal structure, nanosecond switching speed and can be integrated in a crossbar architecture to yield a three-dimensional memory suitable for terabyte and above density.
author2	Ang Diing Shenp
author_facet	Ang Diing Shenp Poh, Jake Wei Li
format	Final Year Project
author	Poh, Jake Wei Li
author_sort	Poh, Jake Wei Li
title	Resistive switching memory : next generation non-volatile memory technology
title_short	Resistive switching memory : next generation non-volatile memory technology
title_full	Resistive switching memory : next generation non-volatile memory technology
title_fullStr	Resistive switching memory : next generation non-volatile memory technology
title_full_unstemmed	Resistive switching memory : next generation non-volatile memory technology
title_sort	resistive switching memory : next generation non-volatile memory technology
publishDate	2019
url	http://hdl.handle.net/10356/77595
_version_	1772829036824756224

Resistive switching memory : next generation non-volatile memory technology

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