Development of resistive random access memory for next-generation embedded non-volatile memory application

• Main Author: Sun, Jianxun
• Other Authors: Chen Tupei
• Format: Thesis-Doctor of Philosophy
• Language: English
• Published: Nanyang Technological University 2021
• Subjects: Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/152482
• Institution: Nanyang Technological University

Resistive random access memory (RRAM) is a promising candidate for the next-generation non-volatile memory owing to its simple structure, fast read/write speed, low power consumption, high memory density, and complementary metal oxide semiconductor (CMOS) compatibility. However, many challenges such...