Investigation of resistive random-accesss memory (RRAM) materials and devices
An advancement in the current technology is pushing for better technological memory devices in terms of performance and reliability. As the current technology such as DRAM and FLASH memory is reaching its limits in its technology to scale down, other forms of technology are required to overcome this...
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| 主要作者: | |
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| 格式: | Final Year Project |
| 語言: | English |
| 出版: |
2019
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| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/77127 |
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| 機構: | Nanyang Technological University |
| 語言: | English |