Investigation of resistive random-accesss memory (RRAM) materials and devices

• Main Author: Sim, Wei Kiat
• Other Authors: Lew Wen Siang
• Format: Final Year Project
• Language: English
• Published: 2019
• Subjects: DRNTU::Science::Physics
• Online Access: http://hdl.handle.net/10356/77127
• Institution: Nanyang Technological University

An advancement in the current technology is pushing for better technological memory devices in terms of performance and reliability. As the current technology such as DRAM and FLASH memory is reaching its limits in its technology to scale down, other forms of technology are required to overcome this...