Investigation of resistive random-accesss memory (RRAM) materials and devices

An advancement in the current technology is pushing for better technological memory devices in terms of performance and reliability. As the current technology such as DRAM and FLASH memory is reaching its limits in its technology to scale down, other forms of technology are required to overcome this...

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Bibliographic Details
Main Author: Sim, Wei Kiat
Other Authors: Lew Wen Siang
Format: Final Year Project
Language:English
Published: 2019
Subjects:
Online Access:http://hdl.handle.net/10356/77127
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Institution: Nanyang Technological University
Language: English

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