First principles based investigations of materials for resistive RAM

• Main Authors: Kishi, Hirofumi, Kishi, Tomoya, Diño, Wilson Agerico, Minamitani, Emi, Akinaga, Hiro, Nakanishi, Hiroshi, Kasai, Hideaki
• Format: text
• Published: Animo Repository 2008
• Subjects: Nonvolatile random-access memory; Transition metal oxides; Physics
• Online Access: https://animorepository.dlsu.edu.ph/faculty_research/4233
• Institution: De La Salle University

We investigate the suitable materials and device structures for Resistive Random Access Memory (ReRAM) based on the first principles calculations. Our calculations base on the model in which the transition metal oxide layers consist of three atomic layers. From the results of energy gap and magnetic...