First principles based investigations of materials for resistive RAM

First principles based investigations of materials for resistive RAM

We investigate the suitable materials and device structures for Resistive Random Access Memory (ReRAM) based on the first principles calculations. Our calculations base on the model in which the transition metal oxide layers consist of three atomic layers. From the results of energy gap and magnetic...

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Bibliographic Details
Main Authors: Kishi, Hirofumi, Kishi, Tomoya, Diño, Wilson Agerico, Minamitani, Emi, Akinaga, Hiro, Nakanishi, Hiroshi, Kasai, Hideaki
Format: text
Published: Animo Repository 2008
Subjects:
Nonvolatile random-access memory
Transition metal oxides
Physics
Online Access:https://animorepository.dlsu.edu.ph/faculty_research/4233
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Institution: De La Salle University
Description
Summary:We investigate the suitable materials and device structures for Resistive Random Access Memory (ReRAM) based on the first principles calculations. Our calculations base on the model in which the transition metal oxide layers consist of three atomic layers. From the results of energy gap and magnetic moment of the transition metals, we can expect that CoO/NiO/CoO for the transition metal oxide layer exhibits high-resistance change and high-speed response. Copyright © 2008 American Scientific Publishers. All rights reserved.

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