First principles based investigations of materials for resistive RAM

First principles based investigations of materials for resistive RAM

We investigate the suitable materials and device structures for Resistive Random Access Memory (ReRAM) based on the first principles calculations. Our calculations base on the model in which the transition metal oxide layers consist of three atomic layers. From the results of energy gap and magnetic...

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Main Authors: Kishi, Hirofumi, Kishi, Tomoya, Diño, Wilson Agerico, Minamitani, Emi, Akinaga, Hiro, Nakanishi, Hiroshi, Kasai, Hideaki
Format: text
Published: Animo Repository 2008
Subjects:
Nonvolatile random-access memory
Transition metal oxides
Physics
Online Access:https://animorepository.dlsu.edu.ph/faculty_research/4233
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Institution: De La Salle University
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spelling oai:animorepository.dlsu.edu.ph:faculty_research-50922022-05-11T04:03:24Z First principles based investigations of materials for resistive RAM Kishi, Hirofumi Kishi, Tomoya Diño, Wilson Agerico Minamitani, Emi Akinaga, Hiro Nakanishi, Hiroshi Kasai, Hideaki We investigate the suitable materials and device structures for Resistive Random Access Memory (ReRAM) based on the first principles calculations. Our calculations base on the model in which the transition metal oxide layers consist of three atomic layers. From the results of energy gap and magnetic moment of the transition metals, we can expect that CoO/NiO/CoO for the transition metal oxide layer exhibits high-resistance change and high-speed response. Copyright © 2008 American Scientific Publishers. All rights reserved. 2008-01-01T08:00:00Z text https://animorepository.dlsu.edu.ph/faculty_research/4233 info:doi/10.1166/jctn.2008.1003 Faculty Research Work Animo Repository Nonvolatile random-access memory Transition metal oxides Physics
institution De La Salle University
building De La Salle University Library
continent Asia
country Philippines
Philippines
content_provider De La Salle University Library
collection DLSU Institutional Repository
topic Nonvolatile random-access memory
Transition metal oxides
Physics
spellingShingle Nonvolatile random-access memory
Transition metal oxides
Physics
Kishi, Hirofumi
Kishi, Tomoya
Diño, Wilson Agerico
Minamitani, Emi
Akinaga, Hiro
Nakanishi, Hiroshi
Kasai, Hideaki
First principles based investigations of materials for resistive RAM
description We investigate the suitable materials and device structures for Resistive Random Access Memory (ReRAM) based on the first principles calculations. Our calculations base on the model in which the transition metal oxide layers consist of three atomic layers. From the results of energy gap and magnetic moment of the transition metals, we can expect that CoO/NiO/CoO for the transition metal oxide layer exhibits high-resistance change and high-speed response. Copyright © 2008 American Scientific Publishers. All rights reserved.
format text
author Kishi, Hirofumi
Kishi, Tomoya
Diño, Wilson Agerico
Minamitani, Emi
Akinaga, Hiro
Nakanishi, Hiroshi
Kasai, Hideaki
author_facet Kishi, Hirofumi
Kishi, Tomoya
Diño, Wilson Agerico
Minamitani, Emi
Akinaga, Hiro
Nakanishi, Hiroshi
Kasai, Hideaki
author_sort Kishi, Hirofumi
title First principles based investigations of materials for resistive RAM
title_short First principles based investigations of materials for resistive RAM
title_full First principles based investigations of materials for resistive RAM
title_fullStr First principles based investigations of materials for resistive RAM
title_full_unstemmed First principles based investigations of materials for resistive RAM
title_sort first principles based investigations of materials for resistive ram
publisher Animo Repository
publishDate 2008
url https://animorepository.dlsu.edu.ph/faculty_research/4233
_version_ 1767196051793510400

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