Investigation of resistive random-accesss memory (RRAM) materials and devices

An advancement in the current technology is pushing for better technological memory devices in terms of performance and reliability. As the current technology such as DRAM and FLASH memory is reaching its limits in its technology to scale down, other forms of technology are required to overcome this...

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Main Author: Sim, Wei Kiat
Other Authors: Lew Wen Siang
Format: Final Year Project
Language:English
Published: 2019
Subjects:
Online Access:http://hdl.handle.net/10356/77127
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-771272023-02-28T23:11:56Z Investigation of resistive random-accesss memory (RRAM) materials and devices Sim, Wei Kiat Lew Wen Siang School of Physical and Mathematical Sciences DRNTU::Science::Physics An advancement in the current technology is pushing for better technological memory devices in terms of performance and reliability. As the current technology such as DRAM and FLASH memory is reaching its limits in its technology to scale down, other forms of technology are required to overcome this limitation. Hence, there is the development of emerging memory devices such as phase-change memory (PCM) and resistive random-access memory (RRAM) and spin-transfer torque random-access memory (STT-RAM). RRAM possess the most potential in terms its scalability and properties among all the emerging memory devices. In this paper, a few different RRAM devices that are made with different metal oxide with the same top and bottom electrodes are fabricated and have its properties tested. Out of the oxides tested, hafnium oxide seems to be the one metal oxide that has promising properties for use in an RRAM device. Bachelor of Science in Applied Physics 2019-05-09T08:30:01Z 2019-05-09T08:30:01Z 2019 Final Year Project (FYP) http://hdl.handle.net/10356/77127 en 70 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Science::Physics
spellingShingle DRNTU::Science::Physics
Sim, Wei Kiat
Investigation of resistive random-accesss memory (RRAM) materials and devices
description An advancement in the current technology is pushing for better technological memory devices in terms of performance and reliability. As the current technology such as DRAM and FLASH memory is reaching its limits in its technology to scale down, other forms of technology are required to overcome this limitation. Hence, there is the development of emerging memory devices such as phase-change memory (PCM) and resistive random-access memory (RRAM) and spin-transfer torque random-access memory (STT-RAM). RRAM possess the most potential in terms its scalability and properties among all the emerging memory devices. In this paper, a few different RRAM devices that are made with different metal oxide with the same top and bottom electrodes are fabricated and have its properties tested. Out of the oxides tested, hafnium oxide seems to be the one metal oxide that has promising properties for use in an RRAM device.
author2 Lew Wen Siang
author_facet Lew Wen Siang
Sim, Wei Kiat
format Final Year Project
author Sim, Wei Kiat
author_sort Sim, Wei Kiat
title Investigation of resistive random-accesss memory (RRAM) materials and devices
title_short Investigation of resistive random-accesss memory (RRAM) materials and devices
title_full Investigation of resistive random-accesss memory (RRAM) materials and devices
title_fullStr Investigation of resistive random-accesss memory (RRAM) materials and devices
title_full_unstemmed Investigation of resistive random-accesss memory (RRAM) materials and devices
title_sort investigation of resistive random-accesss memory (rram) materials and devices
publishDate 2019
url http://hdl.handle.net/10356/77127
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